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PDF TC2623 Data sheet ( Hoja de datos )
| Número de pieza | TC2623 | |
| Descripción | 12GHz Super Low Noise HEMT / AlGaAs/GaAs Field Effect Transistor | |
| Fabricantes | United Monolithic Semiconductors | |
| Logotipo |  |
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TC2623
12GHz Super Low Noise HEMT
AlGaAs/GaAs Field Effect Transistor
Description
The TC2623 is a X/Ku band Schottky
barrier High Electron Mobility Transistor.
This device is based on a 0.25µm
mushroom Aluminium gate associated with
an HEMT active layer and passivated with
a SI3N4 layer.
It is mounted in a 70mils hermetic ceramic-
metal package, easy to match at X band.
It is available in the BMH204 package and
in chip form.
Main Features
§ 0.3dB minimum noise figure @ 5GHz
§ 0.65dB minimum noise figure @ 12GHz
§ 14dB associated gain @ 5GHz
§ 10.5dB associated gain @ 12GHz
2
13
4
1 : Gate
2 : Source
3 : Drain
4 : Source
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Idss Saturated drain current
NFmin Minimum noise figure
Ga Associated gain
Min Typ Max Unit
10 30 60 mA
0.3 0.55 dB
13 14
dB
ESD Protections: Electrostatic discharge sensitive device observe handling precautions!
Ref. : DSTC26237003
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Free Datasheet http://www.0PDF.com
1 page  
12GHz Super Low Noise HEMT
TC2623
BMH204 Package
5,4 ±1
1,02
±0,05
0,51 ±0,05
5,4 ±1
1,78
5,4±1
1,78
5,4
±1
1,3 max
0,5
0,6
0,1
+0,05
-0,03
1,09
0,6
Dimensions in mm
1: Gate
2: Source
3: Drain
4: Source
Ref. : DSTC26237003
5/6 Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Free Datasheet http://www.0PDF.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TC2623.PDF ] | |
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| Número de pieza | Descripción | Fabricantes |
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