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PDF K2611 Data sheet ( Hoja de datos )
| Número de pieza | K2611 | |
| Descripción | 9A, 900V, N-Channel MOSFET, 2SK2611 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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 1. 9A, Transistor ( 2SK2611 )  Hay una vista previa y un enlace de descarga de K2611 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive
Applications
Unit: mm
z Low drain−source ON resistance : RDS (ON) = 1.1 Ω (typ.)
z High forward transfer admittance : |Yfs| = 7.0 S (typ.)
z Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
z Enhancement−mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
Drain current
DC (Note 1)
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
900
900
±30
9
27
150
663
9
15
150
−55~150
V
V
V
A
A
W
mJ
A
mJ
°C
°C
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Rth (ch−c)
Rth (ch−a)
0.833
50
°C / W
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 Ω, IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2006-11-10
1 page  
www.DataSheet4U.com
2SK2611
RG = 25 Ω
VDD = 90 V, L = 15 mH
EAS
=
1
2
⋅ L ⋅ I2
⋅ ⎜⎛
⎝
BVDSS
BVDSS − VDD
⎟⎞
⎠
5 2006-11-10
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet K2611.PDF ] | |
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