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Datasheet K2611 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | K2611 | 9A, 900V, N-Channel MOSFET, 2SK2611
2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 1.1 |
 Toshiba Semiconductor |
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| 1 | K2611B | Silicon N-Channel MOSFET K2611B Product Description
Silicon N-Channel MOSFET
Features
� 11A,900V, RDS(on)(Max1.10Ω)@VGS=10V � Ultra-low Gate charge(Typical 66nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability � RoHS product
General Description
This N-Channel enhancement mode p |
 Winsemi |
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