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PDF IRF630S Data sheet ( Hoja de datos )
| Número de pieza | IRF630S | |
| Descripción | N-channel TrenchMOS transistor | |
| Fabricantes | NXP Semiconductors | |
| Logotipo |  |
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Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF630, IRF630S
FEATURES
• ’Trench’ technology
• Low on-state resistance
• Fast switching
• Low thermal resistance
SYMBOL
d
g
s
QUICK REFERENCE DATA
VDSS = 200 V
ID = 9 A
RDS(ON) ≤ 400 mΩ
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line
switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits
and general purpose switching applications.
The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package
The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package
PINNING
SOT78 (TO220AB)
SOT404 (D2PAK)
PIN DESCRIPTION
1 gate
tab
tab
2 drain1
3 source
tab drain
1 23
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
VDSS
VDGR
VGS
ID
IDM
PD
Tj, Tstg
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature
Tj = 25 ˚C to 175˚C
Tj = 25 ˚C to 175˚C; RGS = 20 kΩ
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
Tmb = 25 ˚C
MIN.
-
-
-
-
-
-
-
- 55
MAX.
200
200
± 20
9
6.3
36
88
175
UNIT
V
V
V
A
A
A
W
˚C
1 It is not possible to make connection to pin:2 of the SOT404 package
August 1999
1
Rev 1.100
1 page  
Philips Semiconductors
N-channel TrenchMOS™ transistor
Product specification
IRF630, IRF630S
Drain current, ID (A)
10
9 VDS > ID X RDS(ON)
8
7
6
5
4
175 C
3
2 Tj = 25 C
1
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Gate-source voltage, VGS (V)
6
Fig.7. Typical transfer characteristics.
ID = f(VGS)
Transconductance, gfs (S)
14
13 VDS > ID X RDS(ON)
12
11
10
9
8
7
6
5
4
3
2
1
0
0123456
Drain current, ID (A)
Tj = 25 C
175 C
789
10
Fig.8. Typical transconductance, Tj = 25 ˚C.
gfs = f(ID)
Normalised On-state Resistance
2.9
2.7
2.5
2.3
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
Junction temperature, Tj (C)
Fig.9. Normalised drain-source on-state resistance.
RDS(ON)/RDS(ON)25 ˚C = f(Tj)
Threshold Voltage, VGS(TO) (V)
4.5
4 maximum
3.5
3 typical
2.5
2 minimum
1.5
1
0.5
0
-60 -40 -20
0 20 40 60 80 100 120 140 160 180
Junction Temperature, Tj (C)
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS
1.0E-01 Drain current, ID (A)
1.0E-02
1.0E-03
1.0E-04
1.0E-05
minimum
typical
maximum
1.0E-06
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
Gate-source voltage, VGS (V)
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C
5
Capacitances, Ciss, Coss, Crss (pF)
10000
1000
Ciss
Coss
100
10
0.1
1 10
Drain-Source Voltage, VDS (V)
Crss
100
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
August 1999
5
Rev 1.100
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRF630S.PDF ] | |
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