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Datasheet IRF630S Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | IRF630S | N - CHANNEL 200V - 0.35ohm - 9A - D2PAK MESH OVERLAY] MOSFET ®
IRF630S
N - CHANNEL 200V - 0.35Ω - 9A - D2PAK MESH OVERLAY ™ MOSFET
TYPE IRF630S
s s s s s s
V DSS 200 V
R DS(on) < 0.40 Ω
ID 9 A
TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VER |
 STMicroelectronics |
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| 3 | IRF630S | N-channel TrenchMOS transistor Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF630, IRF630S
FEATURES
• ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 200 V ID = 9 A
g
RDS(ON) ≤ 400 mΩ
s
GENERAL D |
 NXP Semiconductors |
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| 2 | IRF630S | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK |
 New Jersey Semiconductor |
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| 1 | IRF630S | Power MOSFET ( Transistor ) Power MOSFET
IRF630S, SiHF630S
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
200 VGS = 10 V
43 7.0 23 Single
0.40
D2PAK (TO-263) K
DS G
D
G S
N-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • Surface |
 Vishay |
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nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
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