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Número de pieza | BDX34B | |
Descripción | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP)
Darlington Complementary
Silicon Power Transistors
These devices are designed for general purpose and low speed
switching applications.
Features
• High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
• Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
− BDX33B, 33C/34B, 34C
• Monolithic Construction with Build−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BDX33B, BDX34B
BDX33C, BDX34C
Symbol
VCEO
Value
80
100
Unit
Vdc
Collector−Base Voltage
BDX33B, BDX34B
BDX33C, BDX34C
VCB Vdc
80
100
Emitter−Base Voltage
Collector Current
Continuous
Peak
VEB 5.0 Vdc
IC 10 Adc
15
Base Current
IB 0.25 Adc
Total Device Dissipation @ TC = 25°C
PD
70 W
Derate above 25°C
0.56 W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction−to−Case
Symbol
RqJC
Max
1.78
Unit
°C/W
www.onsemi.com
DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
1
23
TO−220
CASE 221A
STYLE 1
MARKING DIAGRAM
BDX3xyG
AY WW
BDX3xy =
A=
Y=
WW =
G=
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 14
1
Publication Order Number:
BDX33B/D
1 page BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP)
ORDERING INFORMATION
Device
Package
Shipping†
BDX33BG
TO−220
(Pb−Free)
50 Units / Rail
BDX33CG
TO−220
(Pb−Free)
50 Units / Rail
BDX34BG
TO−220
(Pb−Free)
50 Units / Rail
BDX34CG
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BDX34B.PDF ] |
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