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BDX34B Price ( Datasheet, Hoja de datos )

N.º Número de pieza Descripción Fabricantes PDF
11 BDX34B   

NPN/PNP PLASTIC POWER TRANSISTORS


Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD Tj, Tstg Rth(j-c) BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33
CDIL
CDIL
datasheet BDX34B pdf
10 BDX34B   

Silicon PNP Power Transistors


SavantIC Semiconductor Silicon PNP Power Transistors Product Specification BDX34/A/B/C DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON ·Complement to type BDX33/A/B/C APPLICATIONS ·For power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER BDX34 VCBO Collector-base voltage BDX34A BDX34B BDX34C BDX34 VCEO BDX34A Collector-emitter voltage BDX34B BDX34C VEBO IC ICM IB PC Tj Tstg Emitter-base voltage Collector current-DC Collector current-Pulse Base current Collector power dissipation Junct
SavantIC
SavantIC
datasheet BDX34B pdf
9 BDX34B   

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS


® BDX33B BDX33C BDX34B BDX34C COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BDX33B and BDX33C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are BDX34B and BDX34C respectively. 1 2 3 TO-220 INTERNAL SCHEMATIC DIAGRAM R1 Typ. = 10 KΩ R2 Typ. = 150 Ω ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO IC ICM IB P tot Ts tg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Collector Current Collector Peak
STMicroelectronics
STMicroelectronics
datasheet BDX34B pdf
8 BDX34B   

Power Linear and Switching Applications


BDX34/A/B/C BDX34/A/B/C Power Linear and Switching Applications • High Gain General Purpose • Power Darlington TR • Complement to BDX33/33A/33B/33C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BDX34 : BDX34A : BDX34B : BDX34C VCEO Collector-Emitter Voltage : BDX34 : BDX34A : BDX34B : BDX34C Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature - 45 - 60 - 80 - 100 - 45 - 60 - 80 - 100 - 10 - 15 - 0.25 70 150 -
Fairchild Semiconductor
Fairchild Semiconductor
datasheet BDX34B pdf
7 BDX34B   

Darlington Complementary Silicon Power Transistors


MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BDX33B/D Darlington Complementary Silicon Power Transistors . . . designed for general purpose and low speed switching applications. • High DC Current Gain — hFE = 2500 (typ.) at IC = 4.0 • Collector–Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min.) — BDX33B, 34B VCEO(sus) = 100 Vdc (min.) — BDX33C, 34C • Low Collector–Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max.) at IC = 3.0 Adc — BDX33B, 33C/34B, 34C • Monolithic Construction with Build–In Base–Emitter Shunt resistors • TO–220AB Compact Package MAXIMUM RATINGS BDX33B BDX33C* BD
Motorola  Inc
Motorola Inc
datasheet BDX34B pdf
6 BDX34B   

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS


BDX33B, BDX33C (NPN) BDX34B, BDX34C (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching applications. Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0 • Collector−Emitter Sustaining Voltage at 100 mAdc VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B = 100 Vdc (min) − BDX33C, BDX334C • Low Collector−Emitter Saturation Voltage VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc − BDX33B, 33C/34B, 34C • Monolithic Construction with Build−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating
ON Semiconductor
ON Semiconductor
datasheet BDX34B pdf
5 BDX34B   

POWER TRANSISTORS(10A/70W)


A A
Mospec Semiconductor
Mospec Semiconductor
datasheet BDX34B pdf
4 BDX34B   

Transistor de puissance PNP darlington


BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîtier B Boîtier TO-220 Vue de dessus q q q 1 2 3 10 A Courant continu de collecteur Minimum hFE of 750 at 3 V, 3 A C E La broche 2 est en contact avec le boîtier MDTRACA Valeurs limites absolues à une températeur boîtier de 25°C Paramètres BDX34 BDX34A Tension Collector-base (I E = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Tension Collector-e
Power Innovations Limited
Power Innovations Limited
datasheet BDX34B pdf
3 BDX34B   

PNP SILICON POWER DARLINGTONS


BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington Copyright © 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997 q Transistor complémentaire conçut pour être utilisé avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W à 25°C Température du boîtier B Boîtier TO-220 Vue de dessus q q q 1 2 3 10 A Courant continu de collecteur Minimum hFE of 750 at 3 V, 3 A C E La broche 2 est en contact avec le boîtier MDTRACA Valeurs limites absolues à une températeur boîtier de 25°C Paramètres BDX34 BDX34A Tension Collector-base (I E = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Tension Collector-e
Power Innovations Limited
Power Innovations Limited
datasheet BDX34B pdf
2 BDX34B   

(BDX33 / BDX34) NPN/PNP PLASTIC POWER TRANSISTORS


Transys Electronics L I M I T E D NPN/PNP PLASTIC POWER TRANSISTORS BDX33, 33A, 33B, 33C, 33D BDX34, 34A, 34B, 34C, 34D TO-220 Plastic Package Power Darlington for Linear Switchilng Application ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current Continuous Peak Base Current Device Dissipation @ Tc=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case VCEO VCBO VEBO IC ICM IB PD www.DataSheet.net/ BDX33 BDX34 45 45 BDX33A BDX33B BDX33C BDX33D BDX34A BDX34B BDX34C BDX34D 60 80 100 120 60 80 100 120 5.0
TRANSYS
TRANSYS
datasheet BDX34B pdf


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SPS122

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