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PDF 2N2484 Data sheet ( Hoja de datos )
| Número de pieza | 2N2484 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (2 T/\ = 25°C
Derate above 25°C
Total Device Dissipation (a Trj = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
"c
PD
pd
Tj. Tstg
Value
60
60
6.0
50
360
2.06
1.2
6.85
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
2N2484
JAN, JTX, JTXV AVAILABLE
CASE 22-03, STYLE 1
TO-18 (TO-206AA)
AMPLIFIER TRANSISTOR
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Lead Temperature
1/16" from Case for 10 Seconds
Symbol
Rfljc
RflJAd)
TL
Max
146
485
300
Unit
°C/W
°c/w
°c
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) dc = 10 mAdc, \q = 0)
Collector-Base Breakdown Voltage dc = 10 MAdc, Ie = 0)
Emitter-Base Breakdown Voltage He = 10 /xAdc, lc = 0)
Collector Cutoff Current (Vcb = 45 Vdc, Ie = 0)
(Vcb = 45 Vdc, Ie = 0, TA = 150°C)
Emitter Cutoff Current (VgE = 5.0 Vdc, \q = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 1.0 /xAdc, Vce = 5.0 Vdc)
C(l = 10 MAdc, V C e = 5.0 Vdc)
C(l = 10 /iAdc, V C e = 5.0 Vdc, TA = 55°C)
C(l = 100 |iAdc, v C e = 5.0 Vdc)
C(l = 500 piAdc, V C e = 5.0 Vdc)
C(l = 1.0 mAdc, V C e = 5.0 Vdc)
C(l = 10 mAdc, V C E = 5.0 Vdc)(1)
Collector-Emitter Saturation Voltage dc = 1.0 mAdc, Ib = 0.1 mAdc)
Base-Emitter On Voltage dc = 0.1 mAdc, Vce = 5 -0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product dc = 0.05 mAdc, Vce = 5 -0 Vdc, f =
5.0 MHz)
(lC = 0.5 mAdc, V C e = 5.0 Vdc, f = 30
MHz)
Output Capacitance (Vcb = 5.0 Vdc, Ie = 0, f = 140 kHz)
Input Capacitance (Vbe = 0.5 Vdc, lc = 0, f = 140 kHz)
Input Impedance dc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
dc
=
1.0 mAdc, Vce
=
50 vdc f
.
=
10 kHz
>
Small-Signal Current Gain dc = 10 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz
Output Admittance dc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
Noise Figure
dc = 10 MAdc, Vce = 5.0 Vdc, Rs = 10 k'l,
BWf = 100 Hz,
= 20 Hz)
dc = 10 MAdc, V C E = 5.0 Vdc, Rs = 10 k(l,
BWf = 1.0 kHz,
= 200 Hz)
c(l = 10 MAdc, V C E = 5-0 Vdc, Rs = 10 kil,
BWf = 10 kHz,
= 2.0 kHz)
(lC = 10 MAdc, V C E = 5-0 Vdc, Rs = 10 kil,
BWf = 10 Hz to 15.7 kHz,
= 15.7 kHz)
(1) R#ja is measured with the device soldered into a typical printed circuit
(2) Pulse Test: Pulse Width's; 300 ms, Duty Cycle s 2.0%.
Symbol
v (BR)CEO
V(BR)CBO
v (BR)EBO
'CBO
lEBO
60
60
6.0
—
-
hFE
VCE(sat)
v BE(on)
h
30
100
20
175
200
250
—
-
0.5
15
60
Cobo
Cibo
n ie
h re
h fe
n oe
NF
-
L_ -
3.5
-
150
-
NPN SILICON
Typ
-
-
-
—
-
190
250
40
275
300
350
400
0.25
0.65
50
100
—
-
-
10
10
10
—
—500
—
—
—
800
0.35
0.7
-
3.0 6.0
4.0 6.0
- 24
- 800
- 900
- 40
8.0 10
3.0
2.0
3.0
Vdc
Vdc
Vdc
nAdc
MAdc
nAdc
—
Vdc
Vdc
MHz
pF
PF
kn
X 10-6
-
Mmhos
dB
4-37
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N2484.PDF ] | |
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