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Datasheet 2N2484 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 16 | 2N2484 | NPN SILICON AMPLIFIER TRANSISTOR SEME
LAB
MECHANICAL DATA Dimensions in mm (inches)
5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178)
2N2484
NPN SILICON AMPLIFIER TRANSISTOR
FEATURES
• SILICON PLANAR EPITAXIAL NPN TRANSISTOR
4.32 (0.170)
12.7 (0.500) 5.33 (0.210)
min.
0.48 (0.019) 0.41 (0.016)
dia.
2.54 (0.100) Nom.
31 2
T |
 Seme LAB |
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| 15 | 2N2484 | NPN SILICON TRANSISTOR 2N2484 NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2484 type is an NPN silicon transistor designed for low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emit |
 Central Semiconductor |
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| 14 | 2N2484 | AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation (2 T/ = 25°C Derate above 25°C
Total Device Dissipation (a Trj = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol V |
 Motorola Semiconductors |
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| 13 | 2N2484 | NPN Bipolar Transistor NPN Bipolar Transistor
Features:
• Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Product • Low Noise Figure
: BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc
: fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA |
 Multicomp |
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