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PDF 2N2102 Data sheet ( Hoja de datos )
| Número de pieza | 2N2102 | |
| Descripción | AMPLIFIER TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage, Rgg « 10 Ohms
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C
Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCER
VCBO
VEBO
'C
PD
PD
T
J,
Tst g
Value
65
80
120
7.0
1.0
1.0
5.71
5.0
28.6
-65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mWfC
Watts
mW/°C
°C
2N2102
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
AMPLIFIER TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
R&jc
RflJAd)
Max
35
175
Unit
°C/W
°c/w
Refer to 2N3019 for graphs.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dc = 100 mAdc, Rgg =s 10 ohms)
Collector-Emitter Sustaining Voltage(2) dc = 100 mAdc, lg = 0)
Collector-Emitter Breakdown Voltage dc = 100 /^Adc, Veb = 1-5 Vdc)
Collector-Base Breakdown Voltage dc = 100 /xAdc, Iff = 0)
Emitter-Base Breakdown Voltage (Ie = 100 /xAdc, lc = 0)
Collector Cutoff Current (Vcb = 60 Vdc, Ie = 0)
(Vqb = 60 Vdc, Ie = 0, Ta = 150°C)
Emitter Cutoff Current (Vbe = 5.0 Vdc, Iq = 0)
ON CHARACTERISTICS
DC Current Gain
dc = 0.1 mAdc, Vce = 10 Vdc)
dC = 10 mAdc, VCE = 10 Vdc)
C(l = 10 mAdc, VC e = 10 Vdc, TA = -55°C)
dc = 150 mAdc, V C E = 10 Vdc)(2)
dC = 500 mAdc, V C e = 10 Vdc)(2)
dC = 1.0 Adc, Vce = 10Vdc)(2)
Collector-Emitter Saturation Voltage (lc = 150 mAdc, IB = 15 mAdc)
Base-Emitter Saturation Voltage (lc = 150 mAdc, Ib == 15 mAdc)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product dc = 50 mAdc, Vce = 10 Vdc,
f = 20 MHz)
Output Capacitance
(Vcb
=
1°
vdc
-
Ie
=
0, f
=
100 kHz)
Input Capacitance (Vbe = °- 5 Vdc, lc = 0, f = 100 kHz)
Input Impedance dc = 10 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, VC E = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio dc = 10 mAdc, Vce = 5 -0 Vdc, f = 1.0 kHz)
C(l
=
5.0 mAdc, Vce
=
1° vdc f
.
=
1-0 kHz)
Small-Signal Current Gain
dc
=
1.0 mAdc, Vce
=
50
vdc
'
f
=
1-0 kHz)
C(l = 5.0 mAdc, VC e = 10 Vdc, f = 1.0 kHz)
Output Admittance dc = 1.0 mAdc, Vce = 5.0 Vdc, f = 1.0 kHz)
dC = 5.0 mAdc, VC E = 10 Vdc, f = 1.0 kHz)
Noise Figure dc = 300 /xAdc, Vce = 10 Vdc, R$ = 1.0 k Ohm,
f = 1.0 kHz, Bandwidth = 1.0 Hz)
VCER(sus)
VCEO(sus)
V(BR)CEX
V(BR)CBO
V(BR)EBO
ICBO
! EBO
80
65
120
120
7.0
—
-
hFE
VCE(sat)
VBE(sat)
20
35
20
40
25
10
—
-
fT
Cobo
Cjbo
hib
h rb
hfe
h ob
NF
60
—
—
24
4.0
—
30
35
0.01
0.01
—
—
—
—
—
—
—
-
_
—
—
—
—
—
0.15
0.88
—
6.0
50
—
—
z
z
4.0
—
—
—
—
—
2.0
2.0
2.0
—
—
120
—
—
0.5
1.1
-
15
80
34
8.0
3.0
3.0
100
150
0.5
1.0
6.0
SWITCHING CHARACTERISTICS
Switching Time
(1) R9JA is measured with the device soldered into a typical printed circuit board.
+t d + t r
tf
30
(2) Pulse Test: Pulse Width s 300 ixs, Duty Cycle s 2.0%.
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
nAdc
/uAdc
nAdc
Vdc
Vdc
MHz
pF
pF
Ohms
X 10 4
—
jttmho
dB
4-23
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| PDF Descargar | [ Datasheet 2N2102.PDF ] | |
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