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Datasheet 2N2102 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 12 | 2N2102 | Transistor Transistor
Description:
This is a Silicon NPN transistor in a TO-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage low leakage current, low capacity, and beta useful over an extremely wide current range.
Absolute Maximum Ratings:
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 Multicomp |
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| 11 | 2N2102 | NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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 Central Semiconductor |
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| 10 | 2N2102 | AMPLIFIER TRANSISTOR MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage, Rgg « 10 Ohms
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation TA = 25°C
Derate above 25°C Total Device Dissipation (a Tc = 25°C
Derate above 25°C
Operating and Stora |
 Motorola Semiconductors |
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| 9 | 2N2102 | EPITAXIAL PLANAR NPN |
 STMicroelectronics |
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