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PDF 2N2102 Data sheet ( Hoja de datos )
| Número de pieza | 2N2102 | |
| Descripción | Transistor | |
| Fabricantes | Multicomp | |
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Transistor
Description:
This is a Silicon NPN transistor in a TO-39
type case designed primarily for amplifier and
switching applications. This device features high
breakdown voltage low leakage current, low
capacity, and beta useful over an extremely wide
current range.
Absolute Maximum Ratings:
Collector-Base Voltage, Vcbo
: 120V
Collector-Emitter Voltage, Vceo
: 65V
Emitter-Base Voltage, Vebo
: 7V
Continuous Collector Current, Ic
: 1A
Total Device Dissipation
(Ta = +25ºC), Pd
: 800mW
Derate above 25ºC
: 4.6mW/ºC
Total Device Dissipation
(Tc = + 25ºC), Pd
: 5W
Derate above 25ºC
: 28.6mW/ºC
Operating Junction Temperature Range, Tj : -65ºC to +200ºC
Storage Temperature Range, Tstg
: -65ºC to 200ºC
Thermal Resistance,
Junction-to-Case, Rthjc
: 35ºC/W
Thermal Resistance,
Junction-to-Ambient, Rthja
: 175ºC/W
Lead Temperature (During Soldering, 1/16"
from case, 60sec max), Tl
: 300ºC
Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)
Parameter
OFF Characteristics
Collector-Emitter Breakdown Voltage
Symbol Test Conditions
V(br)ceo Ic = 100mA, Ib = 0
Collector-Base Breakdown Voltage
V(br)cbo Ic = 100µA, Ie = 0
Emitter-Base Breakdown Voltage
Collector-Cut-Off Current
Emitter Cut-Off Current
On Characteristics (Note 1)
V(br)ebo
Icbo
Iebo
Ie = 100µA, Ic = 0
Vcb = 60V, Ie = 0
Vcb = 60V, Ie = 0, Ta = +150ºC
Vbe = 5V, Ic = 0
DC Current Gain
Vce = 10V, Ic = 0.1mA
Vce = 10V, Ic = 10mA
Vce = 10V, Ic = 150mA
hfe
Vce = 10V, Ic = 10mA, Ta = -55ºC
Vce = 10V, Ic = 500mA
Vce = 10V, Ic = 1A
www.element14.com
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Page <1>
Min Max Unit
65 -
120 -
7-
- 0.002
-2
- 0.002
V
µA
20 -
35 -
40 120
20 -
25 -
10 -
-
-
-
-
-
-
07/09/12 V1.0
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2N2102.PDF ] | |
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