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PDF TF2300 Data sheet ( Hoja de datos )
| Número de pieza | TF2300 | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | Tuofeng Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de TF2300 (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
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SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT
N-Channel Enhancement Mode Field Effect Transistor
TF2300
Features
VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A
VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A
VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Unit: mm
0.1+0.05
-0.01
11..BGasae te
22.ESmoituterrce
33..cDollreactionr
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain-Current -Continuous * TJ=125
-Pulsed
Power Dissipation *
Thermal Resistance,Junction- to-Ambient
Operating Junction and Storage Temperature Range
* Surface Mounted on FR 4 Board ,t 10 sec.
Symbol
VDS
VGS
ID
IDM
PD
RthJA
Tj.Tstg
Rating
20
10
6.0
20
1.25
100
-55 to 150
Unit
V
V
A
A
W
/W
1 page  
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
20
10
TJ=150°C
TJ=25°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD -Source-to-Drain Voltage (V)
14
12
10
8
6
4
2
0
0.01
Single Pulse Power
0.1 1 10
Time (sec)
100
Normalized Thermal Transient Impedence, Junction to Ambient
1
Duty Cycle=0.5
D=0.2
D=0.1
0.1
D=0.05
D=0.02
D=0.01
0.01
1E-4
SINGLE PULSE
1E-3
1.Duty Cycle, D=t1/t2
2.Per Unit Base=RthJA=100°C/W
3.TJM-TA=PDMZthJA
0.01 0.1
1
Square Wave Pulse Duration (sec)
10
100
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TF2300.PDF ] | |
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