Datasheet TF2300 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	TF2300	N-Channel Enhancement Mode Field Effect Transistor SMD TySpheenzhen Tuofeng Semiconductor TechnologyMCOoS., FLIEtCdT N-Channel Enhancement Mode Field Effect Transistor TF2300 Features VDS=20V,RDS(ON)=30m @VGS=10V,ID=6.0A VDS=20V,RDS(ON)=40m @VGS=4.5V,ID=3.0A VDS=20V,,RDS(ON)=55m @VGS=2.5V,ID=2.0A +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 1	Tuofeng Semiconductor

TF2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
TF2E-xxV	Ultra Small Dip Relay AROMAT MFG # HD1E-M-DC1.5V HD1E-M-DC3V HD1E-M-DC5V HD1E-M-DC6V HD1E-M-DC9V HD1E-M-DC12V HD1E-M-DC24V Coil Volts 1.5VDC 3VDC 5VDC 6VDC 9VDC 12VDC 24VDC Coil Power 280mW 280mW 280mW 280mW 300mW 280mW 280mW Coil ohms 8 32 89 128 270 515 2060 ULTRA-THIN RELAYS DPDT 2 AMP CONTACTS	ETC
TF2-5V	SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TESTING SMALL POLARIZED RELAY WITH HIGH SENSITIVITY TF-RELAYS • Minimal magnetic interference allows high density mounting • Sealed construction allows automatic cleaning • Self-clinching terminal also available 14 .551 9 .354 7.8 .307 FEATURES • High sensitivity: 80	Matsushita Electric Works(Nais)
TF2113	(TF2110 / TF2113) High-Side / Low-Side Gate Drivers TF2110 / TF2113 Features  D rive two N-channel MOSFETs or IGBTs in high-side / low side configuration  T he floating high-side, drivers drive gates operating at up to 500V / 600V  2.5A sink / 2.5A source typical output currents  Outputs tolerant to negative transi	Telefunken

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Número de pieza	Descripción	Fabricantes	PDF
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