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PDF 2SD1857 Data sheet ( Hoja de datos )
| Número de pieza | 2SD1857 | |
| Descripción | Silicon NPN Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION
·High breakdown voltage. (BVCEO = 120V)
·Low collector output capacitance.
·High transition frequency. (fT = 50MHz)
·Complement to Type 2SB1236
APPLICATIONS
·Designed for audio amplifier,
voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous 1.5 A
ICP Collector Current-Pulse
3A
PC Collector Power Dissipation
10 W
TJ Junction Temperature
Tstg Storage Temperature Range
150
-55~150
℃
℃
Product Specification
2SD1857
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SD1857.PDF ] | |
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