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Datasheet 2SD1857 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SD1857 | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High breakdown voltage. (BVCEO = 120V) ·Low collector output capacitance. ·High transition frequency. (fT = 50MHz) ·Complement to Type 2SB1236
APPLICATIONS ·Designed for audio amplifier,
voltage regulator, and general purpose |
 Inchange Semiconductor |
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| 4 | 2SD1857 | Power Transistor Transistors
2SB1236 / 2SB1186 2SC4132 / 2SD1857 / 2SD2343 / 2SD1763
(94L-268-A56)
(96-175-C56)
276
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 ROHM Semiconductor |
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| 3 | 2SD1857 | POWER TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD 2SD1857
POWER TRANSISTOR
FEATURES
* High breakdown voltage.(BVCEO=120V) * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)
NPN SILICON TRANSISTOR
1 TO-92
1 TO-92NL
*Pb-free plating product number: 2SD1857L
ORDERING INFO |
 Unisonic Technologies |
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| 2 | 2SD1857A | Power Transistor (160V / 1.5A) 2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !Ext |
ROHM Semiconductor |
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