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Datasheet SKIIP31NAB12 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1SKIIP31NAB12IGBT POWER MODULE

SKiiP 31 NAB 12 Absolute Maximum Ratings Symbol Inverter VCES VGES IC ICM IF = –IC IFM = –ICM Conditions 1) (Chopper see SKiiP 22 NAB 12) Values 1200 ± 20 45 / 30 90 / 60 38 / 26 76 / 52 1500 35 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s
Semikron
Semikron
igbt
2SKIIP31NAB12T11IGBT Power Module

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SKI Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1SKI-FF530Infrared emitting diode which mounted high power 850 nm IR CHIP

1.0 Ta = 25 Relative luminous intensity ( % ) 0.8 0.6 0.4 0.2 0.0 730 770 810 850 890 930 970 Wavelength λ ( nm ) 2
ETC
ETC
datasheet SKI-FF530 pdf
2SKI03021N-channel Trench Power MOSFET

30 V, 85 A, 2.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03021 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------- 2.6 mΩ max. (VGS = 10 V, ID = 110A)  Qg------ 42.3 nC (VGS
Sanken
Sanken
datasheet SKI03021 pdf
3SKI03036N-channel Trench Power MOSFET

30 V, 80 A, 3.2 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03036 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 57.0 A)  Qg------16.5 nC (VGS
Sanken
Sanken
datasheet SKI03036 pdf
4SKI03063N-channel Trench Power MOSFET

30 V, 40 A, 5.5 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03063 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 40 A  RDS(ON) ----------6.8 mΩ max. (VGS = 10 V, ID = 39.5 A)  Qg------- 9.3 nC (VGS
Sanken
Sanken
datasheet SKI03063 pdf
5SKI03087N-channel Trench Power MOSFET

30 V, 40 A, 7.6 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI03087 Features  V(BR)DSS --------------------------------- 30 V (ID = 100 µA)  ID ---------------------------------------------------------- 40 A  RDS(ON) ----------9.4 mΩ max. (VGS = 10 V, ID = 31.5 A)  Qg------- 7.1 nC (VGS
Sanken
Sanken
datasheet SKI03087 pdf
6SKI04024N-channel Trench Power MOSFET

40 V, 85 A, 2.6 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04024 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 85 A  RDS(ON) ----------3.2 mΩ max. (VGS = 10 V, ID = 82.5 A)  Qg------44.9 nC (VGS
Sanken
Sanken
datasheet SKI04024 pdf
7SKI04033N-channel Trench Power MOSFET

40 V, 80 A, 3.1 mΩ Low RDS(ON) N ch Trench Power MOSFET SKI04033 Features  V(BR)DSS --------------------------------- 40 V (ID = 100 µA)  ID ---------------------------------------------------------- 80 A  RDS(ON) ----------3.9 mΩ max. (VGS = 10 V, ID = 58.5 A)  Qg------26.4 nC (VGS
Sanken
Sanken
datasheet SKI04033 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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