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Datasheet S8550 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Comprar ahora
1S8550TRANSISTOR (PNP)

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO I
Wing Shing Computer Components
Wing Shing Computer Components
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2S8550PNP General Purpose Transistors

S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation
Weitron Technology
Weitron Technology
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3S8550LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR  DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES
Unisonic Technologies
Unisonic Technologies
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4S8550Silicon Epitaxial Planar Transistor

BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z High Collector Current.(IC= -500mA) Complementary To S8050. Excellent HFE Linearity. Production specification S8550 Pb Lead-free APPLICATIONS z High Collector Current. SOT-23 ORDERING INFORMATION Typ
BL
BL
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5S8550Si APD array

APD Si APD array S8550 4 × 8 element APD array with low noise and enhanced short-wavelength sensitivity S8550 is an APD (avalanche photodiode) array designed for short wavelength detection, featuring low noise and low terminal capacitance. S8550 also offers uniform gain and small cross-talk betwe
Hamamatsu Corporation
Hamamatsu Corporation
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S85 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1S852Silicon NPN Planar RF Transistor

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W
Vishay Telefunken
Vishay Telefunken
datasheet S852 pdf
2S852TSilicon NPN Planar RF Transistor

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W
Vishay Telefunken
Vishay Telefunken
datasheet S852T pdf
3S852TFSilicon NPN Planar RF Transistor

S852TF Vishay Semiconductors Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level
Vishay Siliconix
Vishay Siliconix
datasheet S852TF pdf
4S852TWSilicon NPN Planar RF Transistor

S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption D 50 W
Vishay Telefunken
Vishay Telefunken
datasheet S852TW pdf
5S8550PNP Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: -0.5 Collector-base voltage A V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg
Tuofeng Semiconductor
Tuofeng Semiconductor
datasheet S8550 pdf
6S8550TRANSISTOR (PNP)

S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : - 40 V 1 2 3 1. EMITTER 2. BASE 3. COLLECTOR ELECTRICAL CHARACTERISTICS(Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO I
Wing Shing Computer Components
Wing Shing Computer Components
datasheet S8550 pdf
7S8550PNP General Purpose Transistors

S8550 PNP General Purpose Transistors P b Lead(Pb)-Free TO-92 1. E MIT T E R 2. B A SE 3. COL L E CTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-E m itter Voltage Collector-B as e Voltage E m itter-B as e VOltage Collector Current Total Device Dis s ipation
Weitron Technology
Weitron Technology
datasheet S8550 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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