Datasheet PFF2N60 Equivalent ( PDF )

Pyramis Corporation “The Silicon System Solutions Company” Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Features: Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PFB2N60 PFF2N60 PACKAGE TO-220 TO-220F BRAND PFB2N60 PFF2N60 GDS PFB2N60, PFF2N60 PRELIMINARY N-Channel MOSFET VDSS 600V

Feb 2009 PFP13N50, PFF13N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 28 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.46 Ω (Typ.) @VGS=10V APPLIC

Feb 2009 PFP18N50, PFF18N50 FEATURES Originative New Design 100% EAS Test Rugged Gate Oxide Technology Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Unequalled Gate Charge : 48.5 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.26 Ω (Typ.) @VGS=10V APPL

Pyramis Corporation “The Silicon System Solutions Company” Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Features: Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PFB2N60 PFF2N60 PACKAGE TO

Pyramis Corporation “The Silicon System Solutions Company” Applications: Adaptor Charger SMPS Standby Power LCD Panel Power Features: Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PFB4N60, PFF4N60 PRELIMINARY N-Channel MOSFET VDSS 600V

PFP4N60, PFF4N60 N-channel MOSFET Features - High ruggedness - RDS(ON) (Max 2.3 Ω)@VGS=10V - Gate Charge (Typ. 27nC) - Improved dv, dt Capability - 100% Avalanche Tested 1 2 3 1 2 3 1 3 PFF4N60 PFP4N60 BVDSS : 600V ID : 4.5A RDS(ON) : 2.3ohm 2 1. Gate 2. Drain 3. Source General Description Th