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Datasheet P55NF06L Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1P55NF06LSTP55NF06L

STP55NF06L STB55NF06L - STB55NF06L-1 N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET™ II Power MOSFET General features Type STP55NF06L STB55NF06L STB55NF06L-1 VDSS 60V 60V 60V RDS(on) <0.018Ω <0.018Ω <0.018Ω ■ Exceptional dv/dt capability ■ 100% avalanche tested ■ Appli
STMicroelectronics
STMicroelectronics
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P55 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1P5503QVN & P-Channel Enhancement Mode MOSFET

P5503QV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V RDS(ON) 22mΩ @VGS =10V -30V 60mΩ @VGS = -10V ID 7.5A -4.5A Channel N P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS Drain-Source Voltage N 30 V
UNIKC
UNIKC
datasheet P5503QV pdf
2P5504EDGP-Channel Enhancement Mode MOSFET

P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±20 Continuou
UNIKC
UNIKC
datasheet P5504EDG pdf
3P5504EDGP-Channel Logic Level Enhancement

NIKO-SEM P-Channel Enhancement Mode Field Effect Transistor P5504EDG TO-252 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55mΩ ID -21A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Volta
Niko-Sem
Niko-Sem
datasheet P5504EDG pdf
4P5504EVGP-Channel Enhancement Mode MOSFET

P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -40V 55mΩ @VGS = -10V ID -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS -40 Gate-Source Voltage VGS ±25 Continuou
UNIKC
UNIKC
datasheet P5504EVG pdf
5P5504EVGP-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM P-Channel Logic Level Enhancement Mode Field Effect Transistor P5504EVG SOP-8 Lead-Free D PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 55m ID -5.5A 4 :GATE 5,6,7,8 :DRAIN 1,2,3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDIT
Niko
Niko
datasheet P5504EVG pdf
6P5506BDGN-Channel Enhancement Mode MOSFET

P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 60V 55mΩ @VGS = 10V ID 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Dra
UNIKC
UNIKC
datasheet P5506BDG pdf
7P5506BDGN-Channel Logic Level Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Logic Level Enhancement P5506BDG Mode Field Effect Transistor TO-252 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 60 55mΩ ID 22A D G 1.GATE 2.DRAIN 3.SOURCE S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYM
Niko
Niko
datasheet P5506BDG pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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