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Datasheet MTD2007F Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MTD2007FMOTOR CONTROLLER

ŎŕŅijııĸŇ ‫․ ع‬ണዋ Features ٨ ቯชᵹ೙ᓮᯏƫዄ๟ᵄᢙ࿕ቯ‫ઁޔ‬ബᑼዅ ٨ 2bit ቯชᵹ࡟ࡌ࡞ಾᦧนƫዄጚ W1-2 ⋧ബ⏛ኻᔕዅ ٨ ȴേᷫ‫؞‬ಾᦧᯏƫ ٨ ࡁࠗ࠭ࠠࡖࡦ࠮࡞ᯏƫ ٨ ࡮੒ชᵹ඀ᱛᯏƫ ٨ ੺ᾲ଻ࠄᯏƫ ٨ ੂ࣐ช
Shindengen Electric
Shindengen Electric
controller


MTD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MTD-160PHASE CONTROL THYRISTOR

JOINT-STOCK COMPANY «ELECTROVIPRYAMITEL» P H A S E C O N T R O L T H Y R I S T O R - D I O D E www.elvpr.ru M O D U L E S MTT-160, MTTC-160, MTTA-160 MTD-160, MTDC-160, MTDA-160 MDT-160, MDTC-160, MDTA-160 ♦ VDRM/VRRM = 400 - 1600 V ♦ IT(AV) = 160 A (TC = 85 °C) ♦ ITSM = 5 kA (TVj = 125
ELECTROVIPRYAMITEL
ELECTROVIPRYAMITEL
thyristor
2MTD010P03V8P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTD010P03V8 Spec. No. : C391V8 Issued Date : 2016.11.24 Revised Date : Page No. : 1/10 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package BVDSS ID@ TC=25°C, VGS=-1
Cystech Electonics
Cystech Electonics
mosfet
3MTD011N10RH8N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C169H8 Issued Date : 2015.11.23 Revised Date : 2016.04.27 Page No. : 1/10 N-Channel Enhancement Mode Power MOSFET MTD011N10RH8 Features BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C VGS=10V, ID=11.5A RDSON(TYP) VGS=4.5V, ID=9.5A 100V 45A 13.8A 9.2mΩ 12.8
Cystech Electonics
Cystech Electonics
mosfet
4MTD011N10RJ3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RJ3 Spec. No. : C169J3 Issued Date : 2016.07.27 Revised Date : Page No. : 1/ 9 Features • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Pb-free lead plating and h
Cystech Electonics
Cystech Electonics
mosfet
5MTD011N10RQ8N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTD011N10RQ8 Spec. No. : C169Q8 Issued Date : 2015.11.30 Revised Date : 2016.05.25 Page No. : 1/9 Features  Single Drive Requirement  Low On-resistance  Fast Switching Characteristic  Repetitive Avalanche Rated  Pb-fr
Cystech Electonics
Cystech Electonics
mosfet
6MTD015P10E3P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C159F3 Issued Date : 2016.11.02 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTD015P10E3 BVDSS ID @ VGS=-10V, TC=25°C ID @ VGS=-10V, TA=25°C RDSON(TYP) @ VGS=-10V, ID=-20A Features • Simple Drive Requirement • Repetitive Av
Cystech Electonics
Cystech Electonics
mosfet
7MTD030N10QJ3N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. N -Channel Enhancement Mode Power MOSFET MTD030N10QJ3 Spec. No. : C168J3 Issued Date : 2016.03.07 Revised Date : 2016.04.27 Page No. : 1/9 BVDSS ID@VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=10A 100V 29A 23mΩ(typ) Features  Low Gate Charge  Simple Drive Requirement �
Cystech Electonics
Cystech Electonics
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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