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Datasheet MBM27C512 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1MBM27C512CMOS 512K-Bit UV EPROM

Fujitsu
Fujitsu
cmos
2MBM27C512-15CMOS UV EROM

Fujitsu
Fujitsu
cmos
3MBM27C512-17CMOS UV EROM

Fujitsu
Fujitsu
cmos
4MBM27C512-20-xCMOS 512K-Bit UV EPROM

Fujitsu
Fujitsu
cmos
5MBM27C512-25C-MOS 512K-BIT EPROM

C-MOS 512 K (65,536 x 8)-BIT EPROM —TOP VIEW— MBM27C512-25 (1/2) IL08D A15 1 A12 2 A7 3 A6 4 A5 5 A4 6 A3 7 A2 8 A1 9 VDD 28 27 A14 26 A13 25 A8 24 A9 23 A11 22 OE / VPP 21 A10 20 CE 10 A0 9 A1 8 A2 7 A3 6 A4 5 A5 4 A6 3 A7 25 A8 24 A9 21 A10 23 A11 2 A12 26 A13 27 A14 1 A15 CE 20 D0 11 D1
ETC
ETC
data


MBM Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1MBM200A6IGBT MODULE RANGE WITH SOFT AND FAST (SFD) FREE-WHEELING DIODES

Hitachi Semiconductor
Hitachi Semiconductor
igbt
2MBM200GR12IGBT POWER MODULE

Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No. IGBT-SP-99024(R1) MBM200GR12 [Rated 200A/1200V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) �
Hitachi
Hitachi
igbt
3MBM200GR6IGBT POWER MODULE

Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No.IGBT-SP-99020(R1) MBM200GR6 [Rated 200A/600V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · H
Hitachi
Hitachi
igbt
4MBM200GS12AWIGBT POWER MODULE

IGBT MODU ODULE MBM200GS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 80 16 E2 FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 3-M5 2- φ5.6 16
Hitachi
Hitachi
igbt
5MBM200GS6AWIGBT POWER MODULE

IGBT MODU ODULE MBM200GS6AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm 94 4-Fast-on Terminal #110 G2 E2 FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base).
Hitachi
Hitachi
igbt
6MBM200JS12AWIGBT POWER MODULE

IGBT MODU ODULE MBM200JS12AW Silicon N-channel IGBT OUTLINE DRAWING Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 4- φ 6.5 20 108 93 18 20 4
Hitachi
Hitachi
igbt
7MBM200JS12EWIGBT POWER MODULE

IGBT MODU ODULE MBM200JS12EW Silicon N-channel IGBT OUTLINE DRAWING 4-Fast-on Terminal #110 Unit in mm FEAT RES EATURES * High speed and low saturation voltage. * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). * Isolated head sink (terminal to base). 4- φ
Hitachi
Hitachi
igbt



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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