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Datasheet K40T120 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K40T120IGBT, Insulated Gate Bipolar Transistor

FDP52N20 / FDPF52N20T N-Channel MOSFET October 2007 UniFETTM FDP52N20 / FDPF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω Features • RDS(on) = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve d
Infineon
Infineon
igbt
2K40T1202IGBT, Insulated Gate Bipolar Transistor

TrenchStop 2 Generation Series ® nd IKW40N120T2 Low Loss DuoPack :            IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode C Best in class TO247 Short circuit withstand time – 10s Designed for : - Fre
Infineon
Infineon
igbt


K40 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1K4003N-Channel MOSFET, 2SK4003

2SK4003 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π−MOS VI) 2SK4003 Chopper Regulator, DC/DC Converter and Motor Drive Applications 6.5±0.2 Unit: mm 1.5±0.2 z Low drain−source ON-resistance z Low leakage current z Enhancement mode : RDS (ON) = 1.7
Toshiba Semiconductor
Toshiba Semiconductor
data
2K4004-01MRPower MOSFET, Transistor

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
Fuji
Fuji
mosfet
3K4005-01MRN-Channel MOSFET, 2SK4005-01MR

This m aterial and the inform ation herein is the p roperty of Fuji Electric Device Technology C o.,Ltd. They s hall be neither reprod uced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor used for the m anufacturing purp oses without the express written consent of
Fuji Electric
Fuji Electric
data
4K401Photocoupler

Photocoupler K401 • K402 • K404 These Photocouplers consist of two Gallium Arsenide Infrared Emitting Diodes and a Silicon NPN Photo Darlington transistor per a channel. The K401 has one channel in a 4-pin mini-flat SMD package. The K402 has two channels in a 8-pin mini-flat SMD package. The K4
KODENSHI KOREA CORP
KODENSHI KOREA CORP
data
5K4012N-Channel MOSFET, 2SK4012

2SK4012 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) 2SK4012 Switching Regulator Applications Unit: mm z Low drain−source ON-resistance : RDS (ON) = 0.33 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.5 S (typ.) z Low leakage current
Toshiba Semiconductor
Toshiba Semiconductor
data
6K4013N-Channel MOSFET, 2SK4013

2SK4013 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅣ) 2SK4013 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS =
Toshiba Semiconductor
Toshiba Semiconductor
data
7K4017N-Channel MOSFET, 2SK4017

2SK4017 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4017 Chopper Regulator, DC-DC Converter and Motor Drive Applications z 4-V gate drive z Low drain−source ON-resistance: RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance: |Yfs| = 6.0
Toshiba Semiconductor
Toshiba Semiconductor
data



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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