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Datasheet K2876-01MR Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K2876-01MRN-Channel MOSFET, 2SK2876-01MR

2SK2876-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 500V 1,5Ω ±6A 30W > Outline Drawing > Applications Switching Regulators UPS DC-DC converter
Fuji Electric
Fuji Electric
data


K28 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1K2800N-Channel MOSFET, 2SK2800

2SK2800 Silicon N Channel MOS FET High Speed Power Switching ADE-208-513G (Z) 8th. Edition Jun 1998 Features • Low on-resistance R DS(on) = 15 mΩ typ. • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source Outline TO–220AB
Hitachi Semiconductor
Hitachi Semiconductor
datasheet K2800 pdf
2K2803N-Channel MOSFET, 2SK2803

2SK2803 Absolute Maximum Ratings Symbol VDSS VGSS ID ID (pulse) *1 PD EAS *2 I AS Tch Tstg Ratings 450 ± 30 ±3 ± 12 30 (Tc = 25ºC) 30 3 150 –55 to +150 (Ta = 25ºC) External dimensions 1 ...... FM20 Electrical Characteristics Symbol V(BR) DSS I GSS I DSS A A W mJ A ºC ºC VTH Re (yfs) RDS (o
Sanken
Sanken
datasheet K2803 pdf
3K2806-01N-Channel MOSFET, 2SK2806-01

2SK2806-01 FAP-IIIB Series > Features High Current N-channel MOS-FET 30V 0,02Ω 35A 30W > Outline Drawing Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maxi
Fuji Electric
Fuji Electric
datasheet K2806-01 pdf
4K2826N-Channel MOSFET, 2SK2826

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2826 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super Low On-State Resistance RDS(on)1 = 6.5 mΩ (MAX.) (VGS = 10 V, ID =
NEC
NEC
datasheet K2826 pdf
5K2828N-Channel MOSFET, 2SK2828

2SK2828 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator and DC–DC converter • Avalanche ratings Outline TO–3P ADE-208-514 C (Z) 4th. Edition Feb
Hitachi
Hitachi
datasheet K2828 pdf
6K2834-01N-Channel MOSFET, 2SK2834-01

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
Fuji Electric
Fuji Electric
datasheet K2834-01 pdf
7K2835N-Channel MOSFET, 2SK2835

2SK2835 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2835 Chopper Regulator, DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 0.56 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.5 S (typ.) l Low leakage
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K2835 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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