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Datasheet K2750 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1K2750N-Channel MOSFET, 2SK2750

2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2750 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 1.7 Ω (typ.) : |Yfs| = 3.0 S (typ.) Unit: mm z Low leakage c
Toshiba
Toshiba
data


K27 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1K270LOW LEVEL ZENER DIODES VERY LOW VOLTAGE/ LOW LEAKAGE

LOW LEVEL ZENER DIODES VERY LOW VOLTAGE, LOW LEAKAGE K120 - K510 • Conserves battery life • Unique manufacturing process • Provides lowest reverse leakage currents • Low impedance at currents specified at 10 mA and below NOMINAL ZENER VOLTAGE Vz @ Iz = 10 mA (Vdc) 1.2 1.5 1.8 2.1 2.4 2.7 3.0
Knox  Inc
Knox Inc
datasheet K270 pdf
2K2700N-Channel MOSFET, 2SK2700

2SK2700 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII) 2SK2700 Chopper Regulator, DC–DC Converter and Motor Drive Applications z Low drain–source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 3.7 Ω (typ.) Unit:
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K2700 pdf
3K2711N-Channel MOSFET, 2SK2711

www.DataSheet.co.kr Transistors Switching (250V, 16A) 2SK2711 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channe
ROHM Semiconductor
ROHM Semiconductor
datasheet K2711 pdf
4K2715N-Channel MOSFET, 2SK2715

Transistors Switching (500V, 2A) 2SK2715 FFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be ±30V. 5) Easily designed drive circuits. 6) Easy to use in parallel. FStructure Silicon N-channel MOSFET FExternal dim
ROHM Semiconductor
ROHM Semiconductor
datasheet K2715 pdf
5K2717Silicon N Channel MOS Type Field Effect Transistor

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low leakage current : IDSS
Toshiba
Toshiba
datasheet K2717 pdf
6K2718N-Channel MOSFET, 2SK2718

2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 5.6 Ω (typ.) : |Yfs| = 2.0 S (typ.) U
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K2718 pdf
7K2719N-Channel MOSFET, 2SK2719

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ.) High forward transfer admittance: |Yfs| = 2.6 S (typ.) Low leakage current
Toshiba Semiconductor
Toshiba Semiconductor
datasheet K2719 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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