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Datasheet GL5539 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1GL5539GL5516 - GL5549 Photoresistor

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2GL5539Photoresistor

GL55 Series CdS Photoresistor Manual GL55 Series Photoresistor Photoresistor is a resistor which made of semi-conductor material,and the conductance changes with luminance variation .The photoresistor can be manufactured with different figures and illuminated area based on this characteristic.Phot
CdS
CdS
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3GL5539PHOTO CONDUCTIVE CELL

PHOTO CONDUCTIVE CELL Features ■ Epoxy Encapsulated ■ Smali Size ■ Quick Response ■ Reliable Performance ■ High Sensitivity ■ Good Characteristic of Spectrum Applications ■ Auto Flash For Cameras ■ Room Light Control ■ Photolamp ■ Industrial control ■ Photoelectric Control ■
ETC
ETC
data
4GL5539Photoresistor

GL55 Series CdS Photoresistor Manual GL55 Series Photoresistor Photoresistor is a resistor which made of semi-conductor material,and the conductance changes with luminance variation .The photoresistor can be manufactured with different figures and illuminated area based on this characteristic.Phot
SENBA
SENBA
data


GL5 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1GL513TO-18 Type Infrared Emitting Diode

GL514/GL513F GL514/GL513F s Features 1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life TO-18 Type Infrared Emitting
Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL513 pdf
2GL513FTO-18 Type Infrared Emitting Diode

GL514/GL513F GL514/GL513F s Features 1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life TO-18 Type Infrared Emitting
Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL513F pdf
3GL514TO-18 Type Infrared Emitting Diode

GL514/GL513F GL514/GL513F s Features 1. Output : GL514 Φ e MIN. 3.31mW at I F = 100mA GL513F Φ e MIN. 1.44mW at I F = 100mA 2. Beam angle : GL514 ∆θ : TYP. ± 7˚ GL513F ∆θ : TYP. ± 50˚ 3. To- 18 type standard package 4. High reliability, long operation life TO-18 Type Infrared Emitting
Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL514 pdf
4GL5275MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE

Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL527 pdf
5GL5285MM RESIN MOLD TYPE INFRARED LIGHT EMITTING DIODE

Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL528 pdf
6GL533High Speed Infrared Emitting Diode for Camera AF (Automatic Focusing)

GL533 GL533 s Features 1. Small spot light diameter for easy beam diaphragming (TYP. : φ 0.6 mm) 2. High positional accuracy of optical axis (accuracy : ± 0.1 mm) 3. High output type (radiant flux Φ e : TYP. 13mW) 4. Low peak forward voltage type (peak forward voltage V FM : TYP. 2.0V) 5. PSD* E
Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL533 pdf
7GL537 5mm Resin Mold Type Infrared Emitting Diode

GL537/GL538 GL537/GL538 s Features 1. High output power I E : TYP. 30mW/sr at I F = 50mA (GL538 ) 2. Beam angle GL538 ∆θ : TYP. ± 13˚ GL537 ∆θ : TYP. ± 25˚ 3. φ 5mm epoxy resin package φ 5mm Resin Mold Type Infrared Emitting Diode s Outline Dimensions MAX. ( Unit : mm ) φ 5 Blue tr
Sharp Electrionic Components
Sharp Electrionic Components
datasheet GL537 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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