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Datasheet FW26025 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1FW26025A1PNP POWER DARLINGTON TRANSISTOR

® FW26025A1 PNP POWER DARLINGTON TRANSISTOR s INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The FW26025A1 is a silicon Epitaxial-Base PNP power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal c
STMicroelectronics
STMicroelectronics
transistor


FW2 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1FW200Diode, Rectifier

American Microsemiconductor
American Microsemiconductor
diode
2FW20020-242.0P HEADER 24P 6.2H STRAIGHT

2.0P HOUSING 24P 6.2H Materials / Finishes Insulator : Thermo Plastic / Natural Terminal: Copper alloy / Sn plating Mechanical Features Mating force : Max 0.2kgf n(pins) Unmating force : locking : Min 5.0kgf unlocking : 1.0~3.6kgf Contact terminal finish www.DataSheet.net/ More Information Recom
FooSungtech
FooSungtech
data
3FW20020-24S2.0P HEADER 24P 6.2H STRAIGHT

2.0P HOUSING 24P 6.2H Materials / Finishes Insulator : Thermo Plastic / Natural Terminal: Copper alloy / Sn plating Mechanical Features Mating force : Max 0.2kgf n(pins) Unmating force : locking : Min 5.0kgf unlocking : 1.0~3.6kgf Contact terminal finish www.DataSheet.net/ More Information Recom
FooSungtech
FooSungtech
data
4FW20020-24SB2.0P HEADER 24P 6.2H STRAIGHT

2.0P HOUSING 24P 6.2H Materials / Finishes Insulator : Thermo Plastic / Natural Terminal: Copper alloy / Sn plating Mechanical Features Mating force : Max 0.2kgf n(pins) Unmating force : locking : Min 5.0kgf unlocking : 1.0~3.6kgf Contact terminal finish www.DataSheet.net/ More Information Recom
FooSungtech
FooSungtech
data
5FW202Ultrahigh-Speed Switching Applications

Ordering number : EN5318A N-Channel Silicon MOSFET FW202 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting. • Matc
Sanyo Semicon Device
Sanyo Semicon Device
data
6FW203Ultrahigh-Speed Switching Applications

Ordering number : EN5319A N-Channel Silicon MOSFET FW203 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance unit: mm • Ultrahigh-speed switching. 2129-SOP8 • Composite type with two 4V-drive N-channel MOSFETs facilitating high-density mounting. • Matc
Sanyo Semicon Device
Sanyo Semicon Device
data
7FW211DC-DC Converter Applications

Ordering number:EN5579A Features w w w · Low ON resistance. · 2.5V drive. .D a t a Sh t e e 4U . m o c N-Channel Silicon MOSFET FW211 DC-DC Converter Applications Package Dimensions unit:mm 2129 [FW211] 8 5 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-t
Sanyo Semicon Device
Sanyo Semicon Device
converter



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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