Datasheet D209L Equivalent ( PDF ) - Transistor

NPN 型高 功率 晶 管 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R 3DD209L 主要 MAIN CHARACTERISTICS IC VCEO PC 12A 400V 120W 封 Package 用途 - 能 - 子 流器 - 高 源 - 高 功率 - 一般功率放大 路 APPLICATIONS - Energy-saving light - Electronic ballasts - High frequency switching power supply - High frequency power transform - Commonly power amplifier 品

tJ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. , One.. Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) High Switching Speed High Reliability APPLICATIONS Switching regulators Ultrasonic generators High frequency inverters General purpose power amplifiers TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 D209L i

INCHANGE Semiconductor isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability isc Product Specification D209L APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT

R 3DD 209L Æ · ´ ¹ ¿ ¶ ¶¨ ¼ Ð ¾§ ¹ D209L ² Æ· ØÐ ¡ ¸ß ¹ ¡ ¸ß ÷ ¿ ¡ ¸ß¿ª¹Ø ¶ ¡ ¸ß¿ ¿¿Ð ÷ ª ¾ ¡ ¸ßÆ ¿ª¹Ø ´ ¡ × ÷Æ÷ ¡ ¸ßÆ ¹ ± ¡ ° ¹ · ´ · ߶ Ð º ¼° Ч · ¼ ¸ 3DD 209L NPN ¼ Ð ´ ¹ ¾§ ¹ Æ Ð² ÷ ª¹¤ ¼¼ Ð º ¸ß ¹Æ½ 湤 ¼¼ ¡

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: Support for the chip Electrical contacts Suitable embedding interface for

D200 Series Single & Dual Output Miniature, 2W SIP DC, DC Converters Electrical Speci cations Speci cations typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Speci cations subject to change without notice. Input Key Features: Parameter Conditions Min. Ty

TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS C

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER ¨ e e h U 4 t m o .c Silicore 3V USE Outline Drawing D2002 It is built in dual auto -reverse prea mp lifier,

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- SINGLE ENDED FEATURES SIMPLIFIED AMPLIFIER DESIGN M I E K G SUITABLE FOR BROAD BAND APPLICATIONS LOW Crss SIMPLE BIAS C

TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W 28V 1GH- PUSH PULL FEATURES SIMPLIFIED AMPLIFIER DESIGN J K I N M O SUITABLE FOR BROAD BAND APPLICATIONS VERY LOW Crss SIMPLE BIAS CIRCUITS LOW NOI