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Datasheet D2061 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1D2061NPN Transistor, 2SD2061

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD2061 TRANSISTOR (NPN) TO-220F 1. BASE FEATURES z Low saturation voltage z Excellent DC current gain characteristice 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCB
Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
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D20 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1D20Memory Micromodules General Information for D1/ D2 and C Packaging

D10, D15, D20, D22, C20, C30 MICROMODULES Memory Micromodules General Information for D1, D2 and C Packaging s Micromodules were developed specifically for embedding in Smartcards and Memory Cards The Micromodule provides: – Support for the chip – Electrical contacts – Suitable embedding inte
STMicroelectronics
STMicroelectronics
datasheet D20 pdf
2D200SIP DC/DC Converters

D200 Series Single & Dual Output Miniature, 2W SIP DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features: Paramet
uPD
uPD
datasheet D200 pdf
3D2001UKMETAL GATE RF SILICON FET

TetraFET D2001UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Cr
Seme LAB
Seme LAB
datasheet D2001UK pdf
4D2002METAL GATE RF SILICON FET

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
Seme LAB
Seme LAB
datasheet D2002 pdf
5D2002-Stereo Headphone Amplifier

w headphone equipment 3V use). at .D DESCRIPTION w w Th e D2 00 2 is developed for play-b ack stereo dual OCL power a mplifier, and a ripple filter. STEREO aS HEADPHONE AMPLIFIER £¨ e e h U 4 t m o .c Silicore 3V USE£© Outline Drawing D2002 It is built in dual auto -reverse prea mp lifie
Shaoxing Silicore Technology
Shaoxing Silicore Technology
datasheet D2002- pdf
6D2002UKMETAL GATE RF SILICON FET

TetraFET D2002UK METAL GATE RF SILICON FET MECHANICAL DATA C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN M I E K G • SUITABLE FOR BROAD BAND APPLICATIONS • LOW Crss
Seme LAB
Seme LAB
datasheet D2002UK pdf
7D2003METAL GATE RF SILICON FET

TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA B H C 2 3 1 A D E 5 4 F G GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN J K I N M O • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss • SIMPLE BI
Seme LAB
Seme LAB
datasheet D2003 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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