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Datasheet CM8870 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1CM8870CMOS Integrated DTMF Receiver

CALIFORNIA MICRO DEVICES CM8870/70C CMOS Integrated DTMF Receiver Features • Full DTMF receiver • Less than 35mW power consumption • Industrial temperature range • Uses quartz crystal or ceramic resonators • Adjustable acquisition and release times • 18-pin DIP, 18-pin DIP EIAJ, 18-pi
California Micro Devices Corp
California Micro Devices Corp
cmos
2CM8870CCMOS Integrated DTMF Receiver

CALIFORNIA MICRO DEVICES CM8870/70C CMOS Integrated DTMF Receiver Features • Full DTMF receiver • Less than 35mW power consumption • Industrial temperature range • Uses quartz crystal or ceramic resonators • Adjustable acquisition and release times • 18-pin DIP, 18-pin DIP EIAJ, 18-pi
California Micro Devices
California Micro Devices
cmos
3CM8870CPICMOS Integrated DTMF Receiver

CALIFORNIA MICRO DEVICES CM8870/70C CMOS Integrated DTMF Receiver Features • Full DTMF receiver • Less than 35mW power consumption • Industrial temperature range • Uses quartz crystal or ceramic resonators • Adjustable acquisition and release times • 18-pin DIP, 18-pin DIP EIAJ, 18-pi
California Micro Devices Corp
California Micro Devices Corp
cmos
4CM8870CSICMOS Integrated DTMF Receiver

CALIFORNIA MICRO DEVICES CM8870/70C CMOS Integrated DTMF Receiver Features • Full DTMF receiver • Less than 35mW power consumption • Industrial temperature range • Uses quartz crystal or ceramic resonators • Adjustable acquisition and release times • 18-pin DIP, 18-pin DIP EIAJ, 18-pi
California Micro Devices Corp
California Micro Devices Corp
cmos
5CM8870PICMOS Integrated DTMF Receiver

CALIFORNIA MICRO DEVICES CM8870/70C CMOS Integrated DTMF Receiver Features • Full DTMF receiver • Less than 35mW power consumption • Industrial temperature range • Uses quartz crystal or ceramic resonators • Adjustable acquisition and release times • 18-pin DIP, 18-pin DIP EIAJ, 18-pi
California Micro Devices Corp
California Micro Devices Corp
cmos


CM8 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1CM800DU-12HDual IGBTMOD 800 Amperes/600 Volts

CM800DU-12H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMOD™ U-Series Module 800 Amperes/600 Volts A "R" (4 PLACES) E F G H G2 J E2 C2E1 E2 B E K E1 L M G1 C1 J "T" (4 PLACES) N "S" (3 PLACES) Q P D C Description: Powerex IGBTMOD™ Mo
Powerex Power Semiconductors
Powerex Power Semiconductors
datasheet CM800DU-12H pdf
2CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800DZ-34H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800DZ-34H q IC ................................................................... 800A q VCES ..............................................
Powerex Power Semiconductors
Powerex Power Semiconductors
datasheet CM800DZ-34H pdf
3CM800DZ-34HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800DZ-34H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800DZ-34H q IC ................................................................... 800A q VCES .........................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800DZ-34H pdf
4CM800E2C-66H2nd-Version HVIGBT Modules

MITSUBISHI HVIGBT MODULES CM800E2C-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2C-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800E2C-66H pdf
5CM800E2Z-66HHIGH POWER SWITCHING USE

MITSUBISHI HVIGBT MODULES CM800E2Z-66H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM800E2Z-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
datasheet CM800E2Z-66H pdf
6CM800E6C-66HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES CM800E6C-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800E6C-66H q IC ................................................................... 800A q VCES .......................
Mitsubishi Electric
Mitsubishi Electric
datasheet CM800E6C-66H pdf
7CM800HA-24HHIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES CM800HA-24H HIGH POWER SWITCHING USE INSULATED TYPE A B U - M4 THD (2 TYP.) R K P E M G B S - M8 THD (2 TYP.) A C E C J G Q T - DIA. (4 TYP.) H L F N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of on
Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
datasheet CM800HA-24H pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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