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Datasheet C5936 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1C5936NPN Transistor, 2SC5936

2SC5936 Information SI-N 1500/700V 9A 45W 0.2uS - Transistor Spec.info: TOP-3E-A1 Funkció: Hi-res (F) Gyártó: -PAN Spec.info: 100Hz TV
ETC
ETC
data


C59 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1C5902NPN Transistor, 2SC5902

Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • Wide safe operation area • Built-in dumper diode 26.5±0.5 (23.4) (2
Panasonic Semiconductor
Panasonic Semiconductor
datasheet C5902 pdf
2C5904NPN Transistor, 2SC5904

Power Transistors 2SC5904 Silicon NPN triple diffusion mesa type For Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) ■ Features • High breakdown voltage (VCBO ≥ 1 700 V) • High-speed switching (tf < 200 nsec) • Wide safe operation area 26
Panasonic Semiconductor
Panasonic Semiconductor
datasheet C5904 pdf
3C5905NPN Transistor, 2SC5905

Power Transistors 2SC5905 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 700 V • High-speed switching: tf < 200 ns •
Panasonic Semiconductor
Panasonic Semiconductor
datasheet C5905 pdf
4C5906Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed swi
Toshiba
Toshiba
datasheet C5906 pdf
5C5906Silicon NPN transistor

Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed [ Absolute maximum ratings (Ta=
PHENITEC SEMICONDUCTOR
PHENITEC SEMICONDUCTOR
datasheet C5906 pdf
6C5909NPN Transistor, 2SC5909

Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) www.datasheet4u.com 3.0±0.3 5˚ ■ Features (2.0) • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide saf
Panasonic
Panasonic
datasheet C5909 pdf
7C5914NPN Transistor, 2SC5914

Power Transistors 2SC5914 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV, CRT monitor 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns •
Panasonic
Panasonic
datasheet C5914 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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