DataSheet.es    

Datasheet BUT11 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BUT11Silicon diffused power transistors

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-volt
NXP Semiconductors
NXP Semiconductors
transistor
2BUT11NPN SILICON POWER TRANSISTOR

BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact
Power Innovations Limited
Power Innovations Limited
transistor
3BUT11NPN SILICON POWER TRANSISTOR

TRSYS
TRSYS
transistor
4BUT11NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)

BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Wing Shing Computer Components
Wing Shing Computer Components
transistor
5BUT11High Voltage Power Switching Applications

BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base
Fairchild Semiconductor
Fairchild Semiconductor
data


BUT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
1BUT100HIGH POWER NPN SILICON TRANSISTOR

® BUT100 HIGH POWER NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s HIGH CURRENT CAPABILITY s FAST SWITCHING SPEED s HIGH RUGGEDNESS APPLICATION s MOTOR CONTROL s UNINTERRUPTABLE POWER SUPPLY DESCRIPTION The BUT100 is a Multiepitaxial Planar NPN Transistor in TO
STMicroelectronics
STMicroelectronics
datasheet BUT100 pdf
2BUT11Silicon diffused power transistors

DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION High-volt
NXP Semiconductors
NXP Semiconductors
datasheet BUT11 pdf
3BUT11NPN SILICON POWER TRANSISTOR

BUT11 NPN SILICON POWER TRANSISTOR Copyright © 1997, Power Innovations Limited, UK MAY 1989 - REVISED MARCH 1997 q q q Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact
Power Innovations Limited
Power Innovations Limited
datasheet BUT11 pdf
4BUT11NPN SILICON POWER TRANSISTOR

TRSYS
TRSYS
datasheet BUT11 pdf
5BUT11NPN SILICON TRANSISTOR(HIGH VOLTAGE POWER SWITCHING APPLICATIONS)

BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emitter Voltage:BUT11 :BUT11A Collector-Emitter Voltage:BUT11 :BUT11A Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current
Wing Shing Computer Components
Wing Shing Computer Components
datasheet BUT11 pdf
6BUT11High Voltage Power Switching Applications

BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BUT11 : BUT11A VCEO Collector-Emitter Voltage : BUT11 : BUT11A Emitter-Base
Fairchild Semiconductor
Fairchild Semiconductor
datasheet BUT11 pdf
7BUT11NPN SILICON POWER TRANSISTOR

BUT11 NPN SILICON POWER TRANSISTOR ● ● ● Rugged Triple-Diffused Planar Construction 100 W at 25°C Case Temperature 5 A Continuous Collector Current B C E 1 2 3 TO-220 PACKAGE (TOP VIEW) Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ra
Bourns Electronic Solutions
Bourns Electronic Solutions
datasheet BUT11 pdf



Esta página es del resultado de búsqueda del BUT11. Si pulsa el resultado de búsqueda de BUT11 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


DataSheet.es    |   2020    |  Privacy Policy  |  Contacto  |  Sitemap