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Datasheet BF194 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
1BF194TRANZYSTORY

ETC
ETC
data
2BF194(BF194 / BF195) NPN Transistor

File No. Rev. No. : 2049 :A DEVICE SPECIFICATION Page No. TYPE POLARITY APPLICATION PACKAGE : BF194/BF195 : NPN : IF/RF Transistor : TO - 92 C E : 1 of 2 ABSOLUTE MAXIMUM RATINGS: CHARACTERISTIC Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Tota
Value
Value
transistor
3BF194A(BF1xx) TV / Video Devices

Semiconductors
Semiconductors
tv
4BF194B(BF1xx) TV / Video Devices

Semiconductors
Semiconductors
tv


BF1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1BF1005N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

BF 1005 Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BF 1005 Marking Ordering Code Pin Configuration
Siemens Semiconductor Group
Siemens Semiconductor Group
mosfet
2BF1005Silicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostat
Infineon Technologies AG
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3BF1005RSilicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrostat
Infineon Technologies AG
Infineon Technologies AG
mosfet
4BF1005SN-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)

BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Q62702-F1665 Pin Config
Siemens Semiconductor Group
Siemens Semiconductor Group
mosfet
5BF1005SSilicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrost
Infineon Technologies AG
Infineon Technologies AG
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6BF1005SRSilicon N-Channel MOSFET Tetrode

Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 BF1005S... AGC RF Input Drain RF Output G2 + DC G1 GND ESD (Electrost
Infineon Technologies AG
Infineon Technologies AG
mosfet
7BF1005SWSilicon N-Channel MOSFET Tetrode

BF1005S... Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5 V • Integrated biasing network Drain AGC HF Input G2 G1 HF Output + DC GND EHA07215 ESD: Electrostatic discharge sensitive device, observe handling precaution! T
Infineon Technologies AG
Infineon Technologies AG
mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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