Datasheet B950A Equivalent ( PDF )

Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-speed switching Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ra

Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-sp

Power Transistors 2SB950, 2SB950A Silicon PNP epitaxial planar type Darlington 4.2±0.2 For power amplification and switching Complementary to 2SD1276 and 2SD1276A 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q High foward current transfer ratio hFE High-sp

Power Transistors 2SB951, 2SB951A Silicon PNP epitaxial planar type Darlington 0.7±0.1 For midium-speed switching Complementary to 2SD1277 and 2SD1277A 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 Unit: mm 7.5±0.2 s Features q q q 4.0 High foward current transfer ratio hFE High-speed swi