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Datasheet 50N06 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
150N06N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25�
CHONGQING PINGYANG
CHONGQING PINGYANG
mosfet
250N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAM
Inchange Semiconductor
Inchange Semiconductor
mosfet
350N06Power-Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS
Tuofeng Semiconductor
Tuofeng Semiconductor
transistor
450N06Low voltage high current power MOS FET

50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性参数值(TC=25ºC) 参数说明 漏源反向电压 漏源截止电流 栅源截止电流 通态电阻 栅源极
ETC
ETC
data
550N06N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold volta
Unisonic Technologies
Unisonic Technologies
mosfet


50N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
150N02-09SUB50N02-09

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-
Vishay Siliconix
Vishay Siliconix
datasheet 50N02-09 pdf
250N024SUD50N024

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency AP
Vishay Siliconix
Vishay Siliconix
datasheet 50N024 pdf
350N02409PU54ASU50N02409PU54A

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for
Vishay Intertechnology
Vishay Intertechnology
datasheet 50N02409PU54A pdf
450N025-05PSUD50N025-05P

New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion
Vishay Siliconix
Vishay Siliconix
datasheet 50N025-05P pdf
550N03Power Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) �
Tuofeng
Tuofeng
datasheet 50N03 pdf
650N03N-CHANNEL MOSFET

KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(M
KIA
KIA
datasheet 50N03 pdf
750N035N-Channel Field Effect Transistor

Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti
Bay Linear
Bay Linear
datasheet 50N035 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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