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Datasheet 50N02-09 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
150N02-09SUB50N02-09

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-
Vishay Siliconix
Vishay Siliconix
data


50N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
150N02-09SUB50N02-09

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V ID (A)a 20 15 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested APPLICATIONS D High-
Vishay Siliconix
Vishay Siliconix
datasheet 50N02-09 pdf
250N024SUD50N024

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency AP
Vishay Siliconix
Vishay Siliconix
datasheet 50N024 pdf
350N02409PU54ASU50N02409PU54A

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) 24C FEATURES ID (A)d 80 64 rDS(on) (W) 0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for
Vishay Intertechnology
Vishay Intertechnology
datasheet 50N02409PU54A pdf
450N025-05PSUD50N025-05P

New Product SUD50N025-05P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V ID (A)a, e 89 80 Qg (Typ) 30 nC TO-252 FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant APPLICATIONS D DC/DC Conversion
Vishay Siliconix
Vishay Siliconix
datasheet 50N025-05P pdf
550N03Power Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N03 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) �
Tuofeng
Tuofeng
datasheet 50N03 pdf
650N03N-CHANNEL MOSFET

KIA SEMICONDUCTORS 50 Amps, 30 Volts N-CHANNEL MOSFET 1.Features  Advanced trench process technology  High density cell design for ultra low on-resistance  Fully characterized avalanche voltage and current 2.Applications  VDSS=30V,RDS(on)=6.5mΩ,ID=50A  Vds=30V  RDS(ON)=6.5mΩ(M
KIA
KIA
datasheet 50N03 pdf
750N035N-Channel Field Effect Transistor

Bay Linear Linear Excellence N-Channel Field Effect Transistor 50N035 Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti
Bay Linear
Bay Linear
datasheet 50N035 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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