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Datasheet 3N142 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13N142SILICON INSULATED GATE FIELD EFFECT TRANSISTOR

ETC
ETC
transistor


3N1 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
13N100EMTB3N100E

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTB3N100E/D Designer's TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package whi
Motorola Semiconductors
Motorola Semiconductors
datasheet 3N100E pdf
23N121Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N121 pdf
33N123Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N123 pdf
43N128MOSFET AMPLIFIER

MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Drain Current @Total Device Dissipation T/^ = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vDs vDg vgs id Pd Tj, Tstg Value + 20 + 20 ±10 50 330 2.2 -65 to +175 Unit Vdc Vdc Vdc
Motorola Semiconductors
Motorola Semiconductors
datasheet 3N128 pdf
53N128Silicon MOS Transistor

General Electric Solid State
General Electric Solid State
datasheet 3N128 pdf
63N128Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N128 pdf
73N129Trans MOSFET N-CH 20V 0.05A Rail

New Jersey Semiconductor
New Jersey Semiconductor
datasheet 3N129 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
PDF


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