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Datasheet 3DD4130PL Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
13DD4130PLMIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

R NPN 型中压功率开关晶体管 MIDDLING VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 3DD4130PL 主要参数 IC VCEO PC(TO-220) MAIN CHARACTERISTICS 8A 200V 80W 封装 Package 用途 z z z z 节能灯 电子镇流器 电子变压器 一般功率放大电路 APPLICATIONS z Energy-saving lig
JILIN SINO
JILIN SINO
transistor


3DD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
13DD10NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD10, 3DD11 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent th
Shaanxi Qunli Electric
Shaanxi Qunli Electric
datasheet 3DD10 pdf
23DD100NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric
datasheet 3DD100 pdf
33DD101NPN Silicon Low Frequency High Power Transistor

Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD100, 3DD101, 3DD102 NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.
Shaanxi Qunli Electric
Shaanxi Qunli Electric
datasheet 3DD101 pdf
43DD101(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC
datasheet 3DD101 pdf
53DD101ASilicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 3DD101A DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) ·DC Current Gain- : hFE= 20(Min.)@IC= 2A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 0.8V(Max)@ IC= 2.5A APPLICATIONS ·Desi
Inchange Semiconductor
Inchange Semiconductor
datasheet 3DD101A pdf
63DD101ADiscrete semiconductor devices power transistor

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
SJ
SJ
datasheet 3DD101A pdf
73DD101A(3DD101 / 3DD102) NPN

Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com Free Datasheet http://www.Datasheet4U.com
ETC
ETC
datasheet 3DD101A pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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