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Datasheet 2SJ552S Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SJ552SP-Channel MOSFE, Transistor

2SJ552(L), 2SJ552(S) Silicon P Channel MOS FET Description High speed power switching REJ03G0899-0400 (Previous: ADE-208-651B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS (on) = 0.042 Ω typ. • Low drive current. • 4 V gate drive devices. • High speed switching. Outline RENESA
Renesas
Renesas
data
22SJ552SSilicon P Channel MOS FET High Speed Power Switching

2SJ552(L),2SJ552(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-651B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0.042 Ω typ. • Low drive current. • 4V gate drive devices. • High speed switching. Outline LDPAK 4 D 1 G 1 4 2 3 2 3 1. Gate 2. Dra
Hitachi Semiconductor
Hitachi Semiconductor
data


2SJ Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
12SJ0536Silicon P-Channel MOS FET

Silicon MOS FETs (Small Signal) 2SJ0536 Silicon P-Channel MOS FET Secondary battery pack (Li ion battery, etc.) For switching 2.1±0.1 0.425 1.25±0.1 0.425 unit: mm q High-speed switching q S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine pac
Panasonic Semiconductor
Panasonic Semiconductor
data
22SJ103P CHANNEL JUNCTION TYPE (FOR AUDIO AMPLIFIER / ANALOG SWITCH/ CONSTANT CURRENT AND IMPEDANCE CONVERTER APPLICATIONS)

2SJ103 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications · · · · High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270
Toshiba Semiconductor
Toshiba Semiconductor
amplifier
32SJ104Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Low RDS (ON) = 40 Ω (typ.) (IDSS = −5 mA) · Complimenta
Toshiba Semiconductor
Toshiba Semiconductor
transistor
42SJ105Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm · High breakdown voltage: VGDS = 50 V · High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) · Low RDS (ON): RDS (ON
Toshiba Semiconductor
Toshiba Semiconductor
transistor
52SJ106Silicon P Channel Junction Type Field Effect Transistor

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm • High breakdown voltage: VGDS = 50 V • High input impedance: IGSS = 1.0 nA
Toshiba Semiconductor
Toshiba Semiconductor
transistor
62SJ107Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm • High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) • Low RDS (ON): RDS (ON) = 40 Ω (typ.) • Small package �
Toshiba Semiconductor
Toshiba Semiconductor
transistor
72SJ108Silicon P Channel Junction Type Field Effect Transistor

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0
Toshiba Semiconductor
Toshiba Semiconductor
transistor



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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