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Datasheet 2SA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
12SA0683Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
transistor
22SA0684Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
transistor
32SA0879Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base vo
Panasonic Semiconductor
Panasonic Semiconductor
transistor
42SA0885Transistor, Silicon PNP Epitaxial Type

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t
Panasonic Semiconductor
Panasonic Semiconductor
transistor
52SA0886Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter volt
Panasonic Semiconductor
Panasonic Semiconductor
transistor


2SA Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
12SA0683Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SA0683 pdf
22SA0684Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0683 (2SA683), 2SA0684 (2SA684) Silicon PNP epitaxial planar type Unit: mm ■ Features • Allowing supply with the radial taping ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SA0684 pdf
32SA0879Transistor, Silicon PNP Epitaxial Type

Transistors 2SA0879 (2SA879) Silicon PNP epitaxial planar type For general amplification Complementary to 2SC1573 ■ Features • High collector-emitter voltage (Base open) VCEO 0.7+0.3 –0.2 0.7±0.1 Unit: mm 5.9±0.2 4.9±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base vo
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SA0879 pdf
42SA0885Transistor, Silicon PNP Epitaxial Type

Power Transistors 2SA0885 (2SA885) Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification Complementary to 2SC1846 ■ Features • Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SA0885 pdf
52SA0886Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)

Power Transistors 2SA0886 (2SA886) Silicon PNP epitaxial planar type For low-frequency power amplification Complementary to 2SC1847 φ 3.16±0.1 3.8±0.3 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitter open) Collector-emitter volt
Panasonic Semiconductor
Panasonic Semiconductor
datasheet 2SA0886 pdf
62SA100Ge PNP Drift

ETC
ETC
datasheet 2SA100 pdf
72SA1001Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistor isc Product Specification 2SA1001 DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -130V(Min.) APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SY
Inchange Semiconductor
Inchange Semiconductor
datasheet 2SA1001 pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

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