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Datasheet 20NC60VD Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
120NC60VDSTGW20NC60VD

STGW20NC60VD N-CHANNEL 30A - 600V TO-247 Very Fast PowerMESH™ IGBT Table 1: General Features TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGW20NC60VD 600 V < 2.5 V 30 A s OFF LOSSES INCLUDE TAIL CURRENT s LOSSES INCLUDE DIODE RECOVERY ENERGY s HIGH CURRENT CAPABILITY s HIGH FREQUENCY OPER
STMicroelectronics
STMicroelectronics
data


20N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
120N03HLMTD20N03HL

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N03HDL/D Designer's HDTMOS E-FET .™ High Density Power FET DPAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate This advanced HDTMOS power FET is designed to withstand high energy in the avalanche and commutation m
Motorola Semiconductors
Motorola Semiconductors
datasheet 20N03HL pdf
220N03LIPD20N03L

IPD20N03L IPU20N03L OptiMOS® Buck converter series Feature •N-Channel Product Summary VDS RDS(on) ID P- TO251 -3-1 30 20 30 P- TO252 -3-11 V mΩ A •Logic Level •Low On-Resistance RDS(on) •Excellent Gate Charge x R DS(on) product (FOM) •Superior thermal resistance
Infineon Technologies
Infineon Technologies
datasheet 20N03L pdf
320N06N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N06 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.085Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching applications in pow
Inchange Semiconductor
Inchange Semiconductor
datasheet 20N06 pdf
420N06NTD20N06

NTD20N06 Power MOSFET 20 Amps, 60 Volts, N−Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • • • • • • • • • • • • Pb−Free Packages are Ava
ETC
ETC
datasheet 20N06 pdf
520N10N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N10 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.12Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply. ·
Inchange Semiconductor
Inchange Semiconductor
datasheet 20N10 pdf
620N15N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch regulators ·Switching converters, motor drivers, relay dr
Inchange Semiconductor
Inchange Semiconductor
datasheet 20N15 pdf
720N1520A 150V N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 20N15 20A, 150V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 20N15 is an N-Ch annel POWER MOSFET, it u ses UTC’s advanc ed techn ology to provide c ustomers with high switching speed and low gate charge. The UT C 20N15 is su itable fo r bridge ci rcu
UNISONIC TECHNOLOGIES
UNISONIC TECHNOLOGIES
datasheet 20N15 pdf



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nuevas actualizaciones

Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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