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Datasheet 13007 Equivalent ( PDF )

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113007NPN Epitaxial Silicon Transistor

13007 NPN Epitaxial Silicon Transistor HIGH VOLTAGE SWITCH MODE APPLICATION Collector-Emitter Voltage: VCEO=400V Collector Dissipation: PC(max)=80W Absolute Maximum Ratings (TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collect
Elite
Elite
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213007AMJE13007A

A A A A
Mospec Semiconductor
Mospec Semiconductor
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313007BTS13007B

TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @ IC / IB = 8A / 2A Features ● ● High Voltage High Speed Switching Block Diagram Structure ● ● Silicon Triple Diffused Type NPN Silicon Tran
TSC
TSC
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413007NST13007N

® ST13007N ST13007NFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS s s s s s HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWI
STMicroelectronics
STMicroelectronics
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130 Datasheet ( Hoja de datos ) - resultados coincidentes

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11300Crystal Clock Oscillators

CRYSTAL CLOCK OSCILLATORS WARRANTY CLAUSE s 1300 Series No. 1 2 3 4 5 6 7 8 9 Item Vibration Test Shock Test Drop Test Humidity Test Solder Heat Test Thermal Shock Test Terminal Strength Test Soldering Test Solvent Resistance MIL-STD-202F, TM204D, condition B MIL-STD-202F, TM213B, condition 9,800m/s
Nihon Dempa Kogyo
Nihon Dempa Kogyo
datasheet 1300 pdf
21300-102-4xx2.54mm IDC Connector

.100” (2.54 mm) IDC Connector 1300 SERIES “TERMACON” PART NUMBER LEGEND 13X0-XXX-4XX WIRE GAUGE (SEE TABLE 2) NUMBER OF POSITIONS (SEE TABLE 1) FOR STANDARD INSULATOR 0 = W/O LOCKING RAMP & W/O POLARIZING KEY 1 = W/ LOCKING RAMP & W/ POLARIZING KEY 2 = W/ LOCKING RAMP & W/O POLARIZING KEY FOR
Methode Electronics
Methode Electronics
datasheet 1300-102-4xx pdf
313001NPN Epitaxial Silicon Transistor

13001 NPN Epitaxial Silicon Transistor Features Collector-Emitter Voltage: VCEO= 400V Collector Dissipation: PC(max)= 1000mW TO-126 Absolute Maximum Ratings (TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Junct
Elite
Elite
datasheet 13001 pdf
413001SD13001S

R µÍÆ·Å´ó»¾³¶î¨ÄË«¼Ð§Ìå¹Ü D13001S ²úÆ·ÌØÐÔ ¡ô ¡ô ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¡ô ¡ô ¡ô ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ¡ô ¡ô ¡ô ¡ô ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßÆ�
ETC
ETC
datasheet 13001S pdf
513001SEnvironmental rated frequency amplification bipolar transistor

R µÍÆ·Å´ó»¾³¶î¨ÄË«¼Ð§Ìå¹Ü D13001S ²úÆ·ÌØÐÔ ¡ô ¡ô ¸ßÄÍѹ ¸ßµçÁ÷ÈÝ¿ ¡ô ¡ô ¡ô ¸ß¿ª¹ØËÙ¶È ¸ß¿ÉÐÔ »·±£¨ RoHS£©²úÆ· Ö÷ÒªÓÃ; ¡ô ¡ô ¡ô ¡ô ¡ô ½ÚÄÜµÆ µç×ÓÕòÁ÷Æ ¸ßÆ�
ETC
ETC
datasheet 13001S pdf
613002AGNPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13002AG Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST SWITCHING NPN POWER APPLICATIONS „ DESCRIPTION The device is manufactured using High Voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. The UTC 13002AG is d
Unisonic Technologies
Unisonic Technologies
datasheet 13002AG pdf
713002AHNPN SILICON TRANSISTOR

UNISONIC TECHNOLOGIES CO., LTD 13002AH Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13002AH is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high collector-base bre
Unisonic Technologies
Unisonic Technologies
datasheet 13002AH pdf



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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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Sanken
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