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Datasheet 07N60C2 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category
107N60C2SPA07N60C2

www.DataSheet4U.net Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS
Infineon Technologies
Infineon Technologies
data


07N Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes PDF
107N03LBGIPP07N03LBG

IPP07N03LB G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistanc
Infineon
Infineon
datasheet 07N03LBG pdf
207N60C2SPA07N60C2

www.DataSheet4U.net Final data SPP07N60C2, SPB07N60C2 SPA07N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances P-TO220-3-31 Product Summary VDS
Infineon Technologies
Infineon Technologies
datasheet 07N60C2 pdf
307N60C3Power Transistor

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 650 0.6 7.3 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • High peak curren
Infineon
Infineon
datasheet 07N60C3 pdf
407N60S5SPI07N60S5

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance SPP07N60S5 SPI07N60S5 VDS RDS(on
Infineon Technologies
Infineon Technologies
datasheet 07N60S5 pdf
507N65C3SPP07N65C3

SPP07N65C3, SPI07N65C3 SPA07N65C3 CoolMOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 V DS RDS(on) ID PG-TO2
Infineon
Infineon
datasheet 07N65C3 pdf
607N70CP-AN Channel Enhancement mode Power MOSFET

Silicon Standard
Silicon Standard
datasheet 07N70CP-A pdf
707N70CR-AN Channel Enhancement mode Power MOSFET

Silicon Standard
Silicon Standard
datasheet 07N70CR-A pdf



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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