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Datasheet 04N60C3 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Comprar ahora |
1 | 04N60C3 | SPB04N60C3 63%1& &RRO026 3RZHU7UDQVLVWRU
)HDWXUH 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ 8OWUDORZJDWHFKDUJH 3HULRGLFDYDODQFKHUDWHG ([WUHPHGYGWUDWHG +LJKSHDNFXUUHQWFDSDELOLW\ ,PSURYHGWUDQVFRQGXFWDQFH
VDS#Tjmax 5'6RQ ,'
3G72
9 Ω $
7\SH 63%1&
3DFNDJH 3G72
2UGHULQJ&RGH 46
0DUNLQJ 1&
0D[LPXP5DWLQJV 3DUDPHWHU &RQWLQXRXVGUDLQFXUUHQW
TC & TC &
6\PERO 63% ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M
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Infineon |
Descripción y especificaciones del producto |
Muestra la imagen del producto o los pines. 1. 650V MOSFET - Infineon [ Learn More ] |
04N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | 04N50Z | NSS04N50Z
NDP04N50Z, NDD04N50Z N-Channel Power MOSFET 500 V, 2.7 W
Features
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb Free and are RoHS Compliant
VDSS 500 V
http:, , onsemi.com
RDS(on) (MAX) @ 1.5 A 2.7 W
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
| ON Semiconductor |
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2 | 04N60C3 | SPB04N60C3
63%1& &RRO026 3RZHU7UDQVLVWRU
)HDWXUH 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ 8OWUDORZJDWHFKDUJH 3HULRGLFDYDODQFKHUDWHG ([WUHPHGYGWUDWHG +LJKSHDNFXUUHQWFDSDELOLW\ ,PSURYHGWUDQVFRQGXFWDQFH
VDS#Tjmax 5'6RQ ,'
3G72
9 Ω $
7\SH 63%1&
3DFNDJH 3G72
2UGHULQJ&RGH 46
0DUNLQJ 1&
0D[LPXP5DWLQJ
| Infineon |
|
3 | 04N70BF-A | AP04N70BF-A
AP04N70BF-A
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv, dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
650V 2.4Ω 4A
G S
Description
AP04N70 ser
| Advanced Power Electronics |
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4 | 04N70BF-H | AP04N70BF-H
AP04N70BF-H
Pb Free Plating Product
Advanced Power Electronics Corp.
▼ Dynamic dv, dt Rating ▼ Repetitive Avalanche Rated ▼ Fast Switching ▼ Simple Drive Requirement ▼ RoHS Compliant
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
D
BVDSS RDS(ON) ID
700V 2.4Ω 4A
G S
Description
AP04N70 ser
| Advanced Power Electronics |
|
5 | 04N80C3 | SPA04N80C3
SPA04N80C3
CoolMOSTM Power Transistor
Features New revolutionary high voltage technology Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully
| Infineon |
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Número de pieza | Descripción | Fabricantes | |
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