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Datasheet ZXMP4A16G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | ZXMP4A16G | 40V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
ZXMP4A16G
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -40V
RDS(on) max
60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V
ID TA = +25°C
-6.4A
-5.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(O |
 Diodes |
 |
| 3 | ZXMP4A16G | 40V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP4A16G
40V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS = -40V: RDS(on) = 0.060 : ID = -6.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high e |
 Zetex Semiconductors |
|
| 2 | ZXMP4A16GTA | 40V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
ZXMP4A16G
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -40V
RDS(on) max
60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V
ID TA = +25°C
-6.4A
-5.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(O |
Diodes |
|
| 1 | ZXMP4A16GTC | 40V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
ZXMP4A16G
Green
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -40V
RDS(on) max
60mΩ @ VGS = -10V 100mΩ @ VGS = -4.5V
ID TA = +25°C
-6.4A
-5.0A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(O |
Diodes |
|
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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