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ZXMN6A07FQTA Price ( Datasheet, Hoja de datos )

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1 ZXMN6A07FQTA   60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 60V Max RDS(ON) 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = +25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-efficiency power managemen
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Diodes
datasheet ZXMN6A07FQTA pdf

ZXMN6A07F Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
ZXMN6A07F

60V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXMN6A07F 60V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=60V; RDS(ON)=0.4 DESCRIPTION ID=1A This new generation of TRENCH MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for
Zetex Semiconductors
Zetex Semiconductors
datasheet ZXMN6A07F pdf
ZXMN6A07FTA

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 60V Max RDS(ON) 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = +25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-effici
Diodes
Diodes
datasheet ZXMN6A07FTA pdf
ZXMN6A07F

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary V(BR)DSS 60V Max RDS(ON) 250mΩ @ VGS= 10V 350mΩ @ VGS= 4.5V Max ID TA = +25°C (Note 7) 1.4A 1.2A Description This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with a fast switching speed, making it ideal for high-effici
Diodes
Diodes
datasheet ZXMN6A07F pdf


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SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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