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Datasheet ZXMN10A08E6TA Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 ZXMN10A08E6TA   100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching,
Diodes
Diodes
datasheet ZXMN10A08E6TA pdf

ZXMN10A08E Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
ZXMN10A08E6TA

100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance
Diodes
Diodes
datasheet pdf - Diodes
ZXMN10A08E6TC

100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance
Diodes
Diodes
datasheet pdf - Diodes
ZXMN10A08E6

100V N-CHANNEL ENHANCEMENT MODE MOSFET

NEW PRODUCT Product Summary V(BR)DSS 100V Max RDS(on) 250mΩ @ VGS = 10V 300mΩ @ VGS = 6V Max ID TA = 25°C (Note 5) 1.9A 1.68A Description and Applications This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance
Diodes
Diodes
datasheet pdf - Diodes


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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