Datasheet WNMD2165 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	WNMD2165	Dual N-Channel MOSFET WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET VDS (V) Rds(on) (Ω) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating:2000V HBM Descriptions The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low ga	Will Semiconductor

WNMD2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
WNMD2153	Dual N-Channel MOSFET WNMD2153 Dual N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) 20 Rds(on) (ȍ) 0.220@ VGS=4.5V 0.260@ VGS=2.5V 0.320@ VGS=1.8V Descriptions The WNMD2153 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS	Will Semiconductor
WNMD2171	Dual N-Channel MOSFET WNMD2171 Dual N-Channel, 20V, 6A, Power MOSFET Vsss (V) Typ Rss(on) (mΩ) 36@ VGS=4.5V 38@ VGS=4.0V 20 41@ VGS=3.1V 43@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2171 is Dual N-Channel enhancement MOS Field Effect Transistor and connecting the Drains on the circ	Will Semiconductor
WNMD2178	MOSFET ( Transistor ) WNMD2178 WNMD2178 Dual N-Channel, 20V, 6A, Power MOSFET www.sh-willsemi.com Vsss (V) Typ Rss(on) (mΩ) 23.5@ VGS=4.5V 24@ VGS=4.0V 20 26@ VGS=3.1V 29@ VGS=2.5V ESD Rating:2000V HBM Descriptions The WNMD2178 is Dual N-Channel enhancement MOS Field Effect Transistor and	WillSEMI

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Número de pieza	Descripción	Fabricantes	PDF
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