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Datasheet WNM3025 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 WNM3025   MOSFET ( Transistor )

WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RD
WillSEMI
WillSEMI
datasheet WNM3025 pdf

WNM3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
WNM3003

N-Channel MOSFET

Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V(BR)DSS Rds(on) (Ÿ) 0.033@ 10V 0.033@ 10V 0.043 @ 4.5V SOT-23 30V Descriptions The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent
TY Semiconductor
TY Semiconductor
datasheet pdf - TY Semiconductor
WNM3017

MOSFET ( Transistor )

WNM3017 Single N-Channel, 30V, 6.2A, Power MOSFET VDS (V) 30 Typical RDS(on) (mΩ) 17 @ VGS=10V Descriptions The WNM3017 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This de
WillSEMI
WillSEMI
datasheet pdf - WillSEMI
WNM3025

MOSFET ( Transistor )

WNM3025 Single N-Channel, 30V, 0.23A, Power MOSFET VDS (V) 30 Typical RDS(on) (Ω) 1.2 @VGS=10V 1.4 @VGS=4.5V WNM3025 Http://www.sh-willsemi.com G S D Descriptions The WNM3025 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to
WillSEMI
WillSEMI
datasheet pdf - WillSEMI


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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