|
|
Datasheet WNM3008 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | WNM3008 | N-Channel MOSFET WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET
VDS (V) 30
Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V
WNM3008
Http//:www.willsemi.com
Descriptions
The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with l |
Will Semiconductor |
|
1 | WNM3008 | N-Channel MOSFET Product specification
WNM3008
Single N-Channel, 30V, 3.1A, Power MOSFET VDS (V) 30 Rds(on) (ȍ) 0.044@ VGS=10V 0.057@ VGS=4.5V
SOT-23
Descriptions
D The WNM3008 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low |
TY Semiconductor |
Esta página es del resultado de búsqueda del WNM3008. Si pulsa el resultado de búsqueda de WNM3008 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |